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| SS8050LT1 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 0.1 100 100 25 40 6.0 ) E=20 Vdc, I E= 0 40 5.0 O 0.1 0.1 0.1 u u u WEITRON http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=1.0 Vdc) (IC=800 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) Base-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) hFE (1) hFE (2) VCE(sat) VBE(sat) 120 40 350 0.5 1.2 Vdc Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=50 mAdc, VCE=10 Vdc, f=30MHz) fT 100 MHz CLASSIFICATION OF hFE(1) Rank Range L 120-200 H 200-350 WEITRON http://www.weitron.com.tw SS8050LT1 I C , CO LLECTOR CURRENT (mA) 0.5 1000 VCE = 1V IB = 3.0mA 0.4 IB = 2.5mA 0.3 hFE, DC CURRENT GAIN 2.0 100 IB = 2.0mA IB = 1.5mA 0.2 10 IB = 1.0mA 0.1 IB = 0.5mA 1 0.1 0 0.4 0.8 1.2 1.6 1 10 100 1000 FIG.1 Static Characteristic VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS) I C , COLLECTOR CURRENT (mA) FIG.2 DC Current Gain VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA) 10000 100 IC = 10 IB I C , COLLECTOR CURRENT (mA) VCE = 1V V BE(sat) 1000 10 100 1 V CE(sat) 10 0.1 1 10 100 1000 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I C , COLL ECTOR CURRENT (mA) VBE, BASE- EMITTER VOLTAGE (VoLTS) FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage FIG.4 Base-Emitter On Voltage fT , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 10V 100 10 1 1 10 100 400 I C , COLLECTOR CURRENT FIG.5 Current Gain Bandwidth Product WEITRON http://www.weitron.com.tw SS8050LT1 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw |
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